Nexperia – MOSFETs feature high efficiency and low leakage currents


Nexperia supplies a range of NextPowerS3 MOSFETs which use its SchottkyPlus technology to provide the high efficiency and low spiking performance usually associated with MOSFETS that have an integrated Schottky or Schottky-like diode, but without the Schottky diode’s characteristic high leakage current.

This makes NextPowerS3 devices particularly well suited to applications requiring high efficiency at high switching frequencies.

The trend in recent years has been to create faster switching MOSFETs in an effort to reduce switching losses and increase the efficiency of switch-mode power supply designs. Faster switching, however, can generate voltage spikes, coupled-gate glitches and the potential for shoot-through, creating EMI and reliability problems. One popular solution has been to integrate Schottky and Schottky-like diodes into MOSFET structures in order to minimise reverse-recovery losses.

The drawback is that Schottky diodes suffer from high leakage current, especially at high temperatures, and this reduces efficiency, shortens battery run-time and impairs the ability to screen for defects in the manufacturing process. Combining fast switching with soft recovery, Nexperia’s NextPowerS3 range addresses each of these concerns, delivering increased efficiency and higher power density, while keeping voltage spikes under control and limiting leakage current to less than 1μA.


  • Very low gate charge
  • Low switch-node voltage spikes
  • No wire bonds or glue
  • Qualified for operation at up to 175°C
  • Low parasitic inductance and resistance


  • DC-DC converters in servers and telecoms equipment
  • Battery-powered motors
  • Voltage regulator modules
  • Point-of-load modules
  • Power ORing