GaN power devices are growing in popularity, offering an alternative to silicon IGBTs and MOSFETs for applications that require very high performance, low losses and extremely high switching speeds. These GaN ICs require isolated high-side drivers and isolated driver power supplies with an insulation barrier that can cope with high switching voltages, high operating temperatures and fast slew rates.
To meet this requirement, RECOM has developed the RP-xx06S and RxxP06S modules, which offer an output voltage of +6V, sufficient to efficiently switch GaN transistors without causing a gate dielectric breakdown.
The RECOM modules also provide a very high level of DC-DC isolation to cope with the stress to the insulation barrier caused by high ambient temperatures and fast switching edges. The internal transformer design of the RP-xx06S and RxxP06S uses a pot core to physically separate the input and output windings, providing up to 6.4kV DC of isolation. Isolation capacitance is <10pF.
For GaN applications subject to higher noise and transients, RECOM also offers converters with a +9V output, which can be split via a Zener diode circuit into +6V and -3V to provide a negative switching gate voltage.
- Input voltages; 5V, 12V, 15V or 24V
- Industry-standard SIP7 case
- Operating-temperature range: -40°C to 90°C
- UL/IEC/EN62368-1 and IEC/EN60950-1 certified
- Three-year warranty
- Renewable energy systems
- Full-bridge/half-bridge drive circuits
- PFC boost converters
- Smart grid equipment